PART |
Description |
Maker |
WMS512K8BV-15DEIE WMS512K8BV-15DJCE WMS512K8BV-15F |
512K X 8 STANDARD SRAM, 20 ns, CDSO32 512Kx8 MONOLITHIC SRAM
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WHITE ELECTRONIC DESIGNS CORP http:// White Electronic Design...
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WMS512K8BV-20CIE WMS512K8BV-20CIEA WMS512K8BV-17CI |
512Kx8 MONOLITHIC SRAM
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WEDC[White Electronic Designs Corporation]
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WMS512K8LV-70CCE WMS512K8LV-85DEIE WMS512K8LV-85DE |
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
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PMC-Sierra, Inc. Pyramid Semiconductor, Corp.
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WS512K8-45CQ WS512K8-45CMA WS512K8-XCX WS512K8-25C |
From old datasheet system 512Kx8 SRAM MODULE / SMD 5962-92078 512Kx8 SRAM MODULE, SMD 5962-92078
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List of Unclassifed Manufacturers ETC[ETC] White Electronic Designs
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5962-9561307HZX WMS512K8L-15CLC WMS512K8L-15CLCA W |
512Kx8 MONOLITHIC SRAM BOX 4.38X3.25X0.91BLACK BULK STD BLK BOX (3.25X4.38X0.9) STD-I BLK BOX (3.25X4.38X0.9) BOX END PANEL INFRA-RED A27 SERI 512Kx8整装静态存储器 BOX 4.38X3.25X0.91 WALL MT BLK 512Kx8整装静态存储器 BOX 3.3X5.6X1.5 STD EMI BLACK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT BLK 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 GRY 512Kx8整装静态存储器 BOX 4.38X3.25X1.91 WALL MT GRY 512Kx8整装静态存储器 BOX 6.88X4.88X.9 BLK 512Kx8整装静态存储器 BOX STD ALM (4.88X6.88X.9) 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT GRY 512Kx8整装静态存储器 BOX 5.63X3.25X1.51 WALL MT BLK 512Kx8整装静态存储器 STD ALMOND BOX (3.25X4.38X0.9) 512Kx8整装静态存储器 BOX 5.63 X 3.26 X .91 GRY 512Kx8整装静态存储器 512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器 END PANEL W/DB25 FOR A-31 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 BLK 512Kx8整装静态存储器 BOX 4.38X3.25X2.01 GRY 512Kx8整装静态存储器 DIODE, MICRO-MELFDIODE, MICRO-MELF; Voltage, Vrrm:100V; Current, If av:0.15A; Case style:MicroMELF; Current, If max:0.2A; Current, Ifrm:0.45mA; Current, Ifs max:2A; Diameter, External:1.35mm; Diode type:Small signal; Length / Height, SENSOR HI-IMP 30PSIA DIP PKG 20ns; 512K x 8 monilithic SRAM, SMD 5962-95613 35ns; 512K x 8 monilithic SRAM, SMD 5962-95613 15ns; 512K x 8 monilithic SRAM, SMD 5962-95613
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers List of Unclassifed Man... White Electronic Designs
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K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
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WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613 120ns; 512K x 8 monolithic SRAM, SMD 5962-95613 70ns; 512K x 8 monolithic SRAM, SMD 5962-95613 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
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White Electronic Designs
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KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16)的CMOS掩模ROM分位512Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16)的CMOS掩模ROM分位12Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
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http:// SAMSUNG SEMICONDUCTOR CO. LTD.
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EDI88257CA EDI88257CAXCC EDI88257CAXCM EDI88257LPA |
256Kx8 Monolithic SRAM
|
WEDC[White Electronic Designs Corporation]
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